Solid-state image pickup device and manufacturing method thereof

ABSTRACT

There is provided a solid-state image pickup device that includes a functional region provided with an organic film, and a guard ring surrounding the functional region.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent Ser. No. 15/299,838,filed Oct. 21, 2016, which is a continuation of U.S. patent applicationSer. No. 15/086,919, filed Mar. 31, 2016, now U.S. Pat. No. 9,478,585,which is a continuation of U.S. patent application Ser. No. 14/362,422,filed Jun. 3, 2014, now U.S. Pat. No. 9,443,912, issued on Sep. 13,2016, which is a national stage application under 35 U.S.C. 371 andclaims the benefit of PCT Application No. PCT/JP2012/081082, filed Nov.30, 2012, which claims priority to Japanese Patent Application No. JP2011-271195, filed Dec. 12, 2011, the entire disclosures of which arehereby incorporated herein by reference.

TECHNICAL FIELD

The present disclosure relates to a solid-state image pickup device thatuses an organic film as a photoelectric conversion film, and a method ofmanufacturing such a solid-state image pickup device.

BACKGROUND ART

A solid-state image pickup device has been proposed that interposes aphotoelectric conversion film which is configured of an organic filmbetween a transparent pixel electrode and a transparent counterelectrode. On the transparent counter electrode, a protective layer thatis configured of an inorganic material is provided to block offmoisture, gas, and the like (for example, see Japanese Unexamined PatentApplication Publication No. 2006-245045 (PTL 1)).

CITATION LIST Patent Literature

PTL 1: Japanese Unexamined Patent Application Publication No.2006-245045

SUMMARY OF THE INVENTION

The protective layer described in the PTL 1 is capable of suppressingintrusion of moisture and gas (especially, oxygen) from a top surface ofa solid-state image pickup device. However, in the event of intrusion ofmoisture and gas from a transverse direction, such as end surfaces thatare formed at the time of chip dicing, and side surfaces of an aperturefor exposing a bonding pad, it may be difficult to prevent such anintrusion by the use of the protective layer described in the PTL 1, andthus this has caused a disadvantage of deterioration in thecharacteristics of a photoelectric conversion film that is configured ofan organic film.

Accordingly, it is desirable to provide a solid-state image pickupdevice capable of suppressing intrusion of moisture and gas from atransverse direction, such as end surfaces of a chip, and side surfacesof an aperture on a bonding pad, as well as a method of manufacturingsuch a solid-state image pickup device.

A solid-state image pickup device according to an embodiment of thepresent disclosure includes a functional region provided with an organicfilm, and a guard ring surrounding the functional region.

In the solid-state image pickup device according to an embodiment of thepresent disclosure, the functional region having the organic film issurrounded by the guard ring. Therefore, moisture and gas that mayintrude from a transverse direction, such as end surfaces of a chip, andside surfaces of an aperture on a bonding pad are blocked off by theguard ring.

A first method of manufacturing a solid-state image pickup deviceaccording to an embodiment of the present disclosure includes thefollowing steps (A) to (C).

-   (A) Forming a functional region provided with an organic film on a    principal surface side of a semiconductor substrate, and-   (B) Forming a guard ring surrounding the functional region by    laminating one or more metallic layers around the functional region.

A second method of manufacturing a solid-state image pickup deviceaccording to an embodiment of the present disclosure includes thefollowing steps (A) to (C).

-   (A) Forming a functional region provided with an organic film on a    principal surface side of a semiconductor substrate, and forming an    insulating film around the functional region, and-   (B) Forming a guard ring surrounding the functional region by    providing a groove on the insulating film to form an embedded layer    that is configured of a metallic film or a silicon nitride film    inside the groove.

A third method of manufacturing a solid-state image pickup deviceaccording to an embodiment of the present disclosure includes thefollowing steps (A) and (B).

-   (A) Forming a functional region provided with an organic film on a    principal surface side of a semiconductor substrate, and forming an    insulating film around the functional region, and-   (B) Forming a guard ring surrounding the functional region by    providing a groove on the insulating film to clad a passivation film    inside the groove.

According to the solid-state image pickup device of an embodiment of thepresent disclosure, the functional region having the organic film issurrounded by the guard ring. Therefore, it is possible to suppressintrusion of moisture and gas from a transverse direction, such as endsurfaces of a chip, and side surfaces of an aperture on a bonding pad.

According to the first method of manufacturing a solid-state imagepickup device of an embodiment of the present disclosure, the guard ringsurrounding the functional region is formed by laminating one or moremetallic layers around the functional region. According to the secondmethod of manufacturing a solid-state image pickup device of anembodiment of the present disclosure, the guard ring surrounding thefunctional region is formed by providing a groove on the insulating filmaround the functional region to form an embedded layer that isconfigured of a metallic film or a silicon nitride film inside thegroove. According to the third method of manufacturing a solid-stateimage pickup device of an embodiment of the present disclosure, theguard ring surrounding the functional region is formed by providing agroove on the insulating film around the functional region to clad apassivation film inside the groove. Therefore, it is possible to easilymanufacture the above-described solid-state image pickup deviceaccording to an embodiment of the present disclosure.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a schematic plan view showing a configuration of a solid-stateimage pickup device according to a first embodiment of the presentdisclosure.

FIG. 2 is a cross-sectional view in II-II line of the solid-state imagepickup device illustrated in FIG. 1.

FIG. 3 is a cross-sectional view showing a configuration of asolid-state image pickup device according to a second embodiment of thepresent disclosure.

FIG. 4 is a cross-sectional view showing a configuration of asolid-state image pickup device according to a third embodiment of thepresent disclosure.

FIG. 5 is a cross-sectional view showing a configuration of asolid-state image pickup device according to a fourth embodiment of thepresent disclosure.

FIG. 6 is a cross-sectional view showing a configuration of asolid-state image pickup device according to a fifth embodiment of thepresent disclosure.

FIG. 7 is a cross-sectional view showing a configuration of asolid-state image pickup device according to a sixth embodiment of thepresent disclosure.

FIG. 8 is a cross-sectional view showing a configuration of asolid-state image pickup device according to a seventh embodiment of thepresent disclosure.

FIG. 9 is a cross-sectional view showing a modification example of thesolid-state image pickup device illustrated in FIG. 2.

FIG. 10 is a schematic plan view showing another modification example ofthe solid-state image pickup device illustrated in FIG. 1.

MODES FOR CARRYING OUT THE INVENTION

Hereinafter, some embodiments of the present disclosure are described indetails with reference to the drawings. It is to be noted that thedescriptions are provided in the order given below.

-   1. First Embodiment (an example where a first guard ring is provided    at a region that surrounds a functional region and that does not    include an aperture, and an example where a guard ring is formed by    laminating one or more metallic layers around a functional region)-   2. Second Embodiment (an example where a guard ring is formed by    providing a groove on an insulating film around a functional region    to form an embedded layer that is configured of a metallic film or a    silicon nitride film inside the groove)-   3. Third Embodiment (an example where a guard ring is formed by    providing a groove on an insulating film around a functional region    to clad a passivation film inside the groove)-   4. Fourth Embodiment (an example where a second guard ring    surrounding an aperture and a third guard ring along an outer    circumference of a chip are provided)-   5. Fifth Embodiment (an example where all of first guard ring,    second guard ring, and third guard ring are used in combination)-   6. Sixth Embodiment (an example where a second guard ring is    provided across a plurality of apertures)-   7. Seventh Embodiment (an example of a connecting configuration    between a lower transparent electrode and a bonding pad)-   8. Modification Examples

1. First Embodiment

FIG. 1 shows a planar configuration of a chip that is a solid-stateimage pickup device according to a first embodiment of the presentdisclosure. FIG. 2 shows an example of a cross-sectional configurationin II-II line of the solid-state image pickup device illustrated inFIG. 1. This solid-state image pickup device 1 is used in an electronicapparatus such as a camera, and has a functional region (photoelectricconversion region) 11 that performs a photoelectric conversion at thecenter of a rectangular chip 10. At the functional region 11, an organicfilm 11A that is a photoelectric conversion film is provided, and aplurality of pixels each of which is configured of a solid-state imagepickup element having this organic film 11A are arranged in a matrixpattern. In a peripheral region 12 around the functional region 11, aplurality of bonding pads 13 are arranged in a manner of surrounding thefunctional region 11. On each of these bonding pads 13, there isprovided an aperture 14.

The organic film 11A is configured of an organic photoelectricconversion film. The organic photoelectric conversion film that performsa photoelectric conversion with green wavelength light may be configuredof an organic photoelectric conversion material including, for example,rhodamine-based pigment, melacyanine-based pigment, quinacridone, andthe like. The organic photoelectric conversion film that performs aphotoelectric conversion with red wavelength light may be configured ofan organic photoelectric conversion material including, for example,phthalocyanine-based pigment. The organic photoelectric conversion filmthat performs a photoelectric conversion with blue wavelength light maybe configured of an organic photoelectric conversion material including,for example, coumarine-based pigment, tris-8-hydroxyquinoline aluminum(Alq₃), melacyanine-based pigment, and the like.

The organic film 11A is interposed between a lower transparent electrode(pixel electrode) 11B and an upper transparent electrode (counterelectrode) 11C. The lower transparent electrode 11B is split withrespect to each of the plurality of pixels inside the functional region11. FIG. 2 shows the lower transparent electrode 11B corresponding tothree pixels. However, as a matter of course, it is possible to set upthe number of pixels arbitrarily as appropriate. The lower transparentelectrode 11B is connected with the bonding pad 13 via wiring that isnot shown in the drawing. This connection between the lower transparentelectrode 11B and the bonding pad 13 is described by taking an examplein the seventh embodiment. The upper transparent electrode 11C is acommon electrode for all of the plurality of pixels inside thefunctional region 11. Each of the lower transparent electrode 11B andthe upper transparent electrode 11C may be configured of a transparentconductive material such as ITO (Indium Tin Oxide).

The functional region 11 is provided on the side of a principal surface(light incidence surface) of a semiconductor substrate 21 such as asilicon (Si) substrate. In a surrounding area (lateral side and lowerside) of the functional region 11, there are provided insulating films22A, 22B, and 22C (hereinafter collectively called an insulating film22) each of which is configured of a silicon oxide (SiO₂) film.

A top surface of the chip 10, more specifically, a top surface of thefunctional region 11 and a top surface of the insulating film 22 arecovered by a passivation film 30 over a whole area thereof. Thepassivation film 30 has a function as a protective film for preventingmoisture and gas from intruding into the functional region 11 from thetop surface of the chip 10, and may be desirably configured of amaterial film that is not permeable to moisture and oxygen. In concreteterms, the passivation film 30 may be desirably configured of a siliconnitride film, a silicon oxynitride film, or an aluminum oxide film.Alternatively, the passivation film 30 may be desirably configured of alaminated film stacking the silicon nitride film, the silicon oxynitridefilm, or the aluminum oxide film.

On the other hand, four end surfaces 10A of the chip 10 are formed bydicing (cutting), and cutting surfaces of the insulating film 22 and thelike are exposed thereon. Also, on side surfaces of the aperture 14illustrated in FIG. 1 as well, cutting surfaces of the insulating film22 and the like are exposed.

Accordingly, this solid-state image pickup device 1 has a guard ring 40surrounding the functional region 11. More specifically, this guard ring40 is configured of a material film that is not permeable to moistureand oxygen. As a result, in this solid-state image pickup device 1, itis possible to block off any intrusion path of moisture and gas from atransverse direction, such as the end surfaces 10A of the chip 10, andside surfaces of the aperture 14 on the bonding pad 13, and to preventmoisture and gas from intruding into the functional region 11.

As a planar shape of the guard ring 40, it may be desirable to include afirst guard ring 41 that is provided at a region that surrounds thefunctional region 11 and that does not include the aperture 14. In otherwords, the first guard ring 41 may be desirably arranged at an outerside from the functional region 11 and at an inner side from theaperture 14. This is because when the aperture 14 is placed within aregion surrounded by the first guard ring 41, an intrusion path ofmoisture and gas may be formed that reaches the functional region 11from the side surfaces of the aperture 14. More specifically, as shownin FIG. 1, the first guard ring 41 is arranged with the aperture 14excluded along a visible outline of the functional region 11. It is tobe noted that a planar shape of the guard ring 40 is not limited to arectangle illustrated in FIG. 1, and may have various forms inaccordance with shapes and arrangements of the functional region 11 andthe aperture 14. Possible examples of a planar shape of the guard ring40 may include a polygon, a circle, an ellipse, a shape includingcurves, such as a rectangle with rounded corners, and other indefiniteshapes.

As a cross-sectional configuration of the guard ring 40, it may bedesirable to have a configuration in which one or more metallic layersare laminated around the functional region 11 on the principal surfaceside of the semiconductor substrate 21. More specifically, for example,as shown in FIG. 2, the guard ring 40 may have a configuration ofvertically stacking four-layer metallic layers including a firstmetallic plug 40A, a first metallic wire 40B, a second metallic plug40C, and a second metallic wire 40D in this order from the semiconductorsubstrate 21. It is possible to form these metallic layers by utilizingexisting metallic wiring layers that are originally provided on thesolid-state image pickup device 1, such as plugs (not shown in thedrawing) for making a connection between the lower transparent electrode11B and the semiconductor substrate 21, and wires (not shown in thedrawing) for applying voltages to the lower transparent electrode 11Band the upper transparent electrode 11C, and by using the same processeson the same layers as with these existing metallic wiring layers.

Each of the metallic layers configuring the guard ring 40 may bedesirably configured of, for example, aluminum, tungsten, titanium,molybdenum, tantalum, copper, an alloy film of aluminum, tungsten,titanium, molybdenum, tantalum, copper, or a silicon- oroxygen-containing metallic film of aluminum, tungsten, titanium,molybdenum, tantalum, and copper. Examples of the above-describedsilicon-containing metallic film may include silicon-containing aluminum(AlSi), tungsten silicide (WSix), and titanium silicide (TiSix). Anexample of the above-described oxygen-containing metallic film mayinclude an aluminum oxide (Al₂O₃) film.

The lowermost metallic layer configuring the guard ring 40 (that is, thefirst metallic plug 40A in FIG. 2) may be desirably connected with thesemiconductor substrate 21. This is because it is possible to assuredlyblock off intrusion of moisture and the like.

The passivation film 30 may be desirably cladded directly just above theuppermost metallic layer configuring the guard ring 40 (that is, thesecond metallic wire 40D in FIG. 2). This is because when a siliconoxide film such as the insulating film 22 is interposed between thepassivation film 30 and the guard ring 40, an intrusion path of moistureand the like may be formed through such a silicon oxide film.

It is to be noted that if the guard ring 40 is configured of at leastone layer on the same layer as the organic film 11A (just beside theorganic film 11A), it is possible to prevent moisture and gas fromintruding into the organic film 11A. However, as described above, theguard ring 40 may desirably have a configuration of laminating one ormore metallic layers. The silicon oxide film configuring the insulatingfilm 22 is apt to permeate moisture and the like therethrough, and thusa laminated structure of the guard ring 40 allows propagation ofmoisture and the like through the insulating film 22 to be suppressedassuredly. Further, a laminated structure of the guard ring 40 makes itpossible to reduce unevenness or level difference on the top surface ofthe chip 10, and it is possible to facilitate subsequent manufacturingprocesses (formation of a planarizing film, as well as formation of acolor filter and an on-chip lens).

It is possible to manufacture this solid-state image pickup device 1 inthe following manner, for example.

First, the insulating film 22A that is made of the above-describedmaterial is formed on the semiconductor substrate 21. An aperture isprovided on the insulating film 22A, and the first metallic plug 40Acorresponding to a lowermost layer of the guard ring 40 is formed insidethis aperture. At the same time, if desired, a metallic plug or ametallic wire that is not shown in the drawing may be formed.

Next, the insulating film 22B that is made of the above-describedmaterial is formed on the insulating film 22A. An aperture is providedon the insulating film 22B, and the first metallic wire 40Bcorresponding to a second layer of the guard ring 40 is stacked on thefirst metallic plug 40A. At the same time, if desired, a metallic plugor a metallic wire that is not shown in the drawing may be formed.

Subsequently, the lower transparent electrode 11B that is made of theabove-described material is formed on the insulating film 22B.Thereafter, the insulating film 22C that is made of the above-describedmaterial is formed at a clearance and a surrounding area of the lowertransparent electrode 11B. An aperture is provided on the insulatingfilm 22C, and the second metallic plug 40C corresponding to a thirdlayer of the guard ring 40 is stacked on the first metallic wire 40B. Atthe same time, if desired, a metallic plug or a metallic wire that isnot shown in the drawing may be formed.

Thereafter, the organic film 11A and the upper transparent electrode 11Care formed on the lower transparent electrode 11B. In such a manner, thefunctional region 11 having the lower transparent electrode 11B and theupper transparent electrode 11C with the organic film 11A interposedbetween is formed.

Further, the second metallic wire 40D corresponding to an uppermostlayer of the guard ring 40 is stacked on the second metallic plug 40C.In such a manner, the guard ring 40 that stacks the four-layer metalliclayers is formed around the functional region 11. At the same time, ifdesired, a metallic plug or a metallic wire that is not shown in thedrawing may be formed.

Afterward, the passivation film 30 that is made of the above-describedmaterial is formed over a whole area of the top surface of thefunctional region 11 and the top surface of the insulating film 22. Atthis time, the passivation film 30 may be desirably cladded directlyjust above the uppermost metallic layer configuring the guard ring (thatis, the second metallic wire 40D in FIG. 2).

Further, the bonding pads 13 that are not shown in the drawing areformed around the functional region 11. The aperture 14 is provided at aposition each facing the bonding pads 13 on the insulating film 22 orthe semiconductor substrate 21, and each of the bonding pads 13 isexposed on the bottom of the aperture 14. Such steps that are describedthus far complete the solid-state image pickup device 1 illustrated inFIG. 1 and FIG. 2.

In this solid-state image pickup device 1, an electric charge isgenerated upon incidence of light into the organic film 11A. Apredetermined voltage is applied between the lower transparent electrode11B and the upper transparent electrode 11C, and a signal charge iscollected on the lower transparent electrode 11B by an electric fieldthat is generated by this voltage to be further transferred to a chargeoutput section that is not shown in the drawing, and then is output tothe outside of the chip 10 via multi-layer wiring that is not shown inthe drawing and the bonding pads 13.

Here, the guard ring 40 is provided in a manner of surrounding thefunctional region 11 having the organic layer 11A. This guard ring 40includes the first guard ring 41 that is provided at a region thatsurrounds the functional region 11 and that does not include theaperture 14. By the use of this first guard ring 41, an intrusion pathof moisture and gas from a transverse direction that may reach thefunctional region 11 via the insulating film 22 and the like from theend surfaces 10A of the chip 10 and the side surfaces of the aperture 14on the bonding pad 13 is blocked. As a result, any moisture and gas thatmay intrude from a transverse direction, such as the end surfaces 10A ofthe chip 10, and the side surfaces of the aperture 14 on the bonding pad13 are blocked by the guard ring 40 to suppress deterioration in thecharacteristics of the organic layer 11A.

As described above, in this embodiment of the present disclosure, thefunctional region 11 having the organic layer 11A is surrounded by theguard ring 40, and thus it is possible to suppress intrusion of moistureand gas from a transverse direction, such as the end surfaces 10A of thechip 10, and the side surfaces of the aperture 14 on the bonding pad 13.

Further, the guard ring 40 is configured in such a manner that one ormore metallic layers (metallic plugs 40A and 40C as well as metallicwires 40B and 40D) are laminated around the functional region 11, andthus it is possible to form the guard ring 40 by utilizing existingmetallic wiring layers that are originally provided on the solid-stateimage pickup device 1, and to easily manufacture the solid-state imagepickup device 1 according to the above-described embodiment of thepresent disclosure.

It is to be noted that, in the above-described embodiment of the presentdisclosure, the description is provided on a case where the two-layermetallic wires 40B and 40D are connected with the semiconductorsubstrate 21 using the two-layer metallic plugs 40A and 40C as across-sectional configuration of the guard ring 40. However, as a matterof course, the number of the metallic layers configuring the guard ring40 may be changed in accordance with the number of the metallic wiringlayers that are provided on the solid-state image pickup device 1.Further, the guard ring 40 does not necessarily have to be configuredusing all the metallic plugs and metallic wiring layers that areprovided on the solid-state image pickup device 1, and it is possible toconfigure the guard ring 40 using arbitrary wiring layers.

2. Second Embodiment

FIG. 3 shows a cross-sectional configuration of a solid-state imagepickup device according to a second embodiment of the presentdisclosure. This solid-state image pickup device 1A is different fromthe solid-state image pickup device 1 according to the first embodimentin the cross-sectional configuration of the guard ring 40. Morespecifically, the guard ring 40 is configured of an embedded layer 40Ethat is embedded into the inside of a groove 23 that is provided on theinsulating film 22. By providing the embedded layer 40E that isdedicated to the guard ring 40 in such a manner, it is possible to setup a material and thickness of the embedded layer 40E without anyrestriction. Especially, this may be preferable for a case where awiring layer is formed of only a transparent electrode layer made of amaterial such as ITO that does not have a function of suppressingpermeation of moisture and gas.

The embedded layer 40E configuring the guard ring 40 may be desirablyconfigured of a metallic film or a silicon nitride film. Further, themetallic film may be desirably configured of, for example, aluminum,tungsten, titanium, molybdenum, tantalum, copper, an alloy film ofaluminum, tungsten, titanium, molybdenum, tantalum, copper, or asilicon- or oxygen-containing metallic film of aluminum, tungsten,titanium, molybdenum, tantalum, and copper. Examples of theabove-described silicon-containing metallic film may includesilicon-containing aluminum (AlSi), tungsten silicide (WSix), andtitanium silicide (TiSix). An example of the above-describedoxygen-containing metallic film may include an aluminum oxide (Al₂O₃)film.

The groove 23 may desirably reach the semiconductor substrate 21. Thereason is that this makes it possible to assuredly block off intrusionof moisture and the like.

The passivation film 30 may be desirably cladded directly just above theembedded layer 40E configuring the guard ring 40. This is because when asilicon oxide film such as the insulating film 22 is interposed betweenthe passivation film 30 and the embedded layer 40E, an intrusion path ofmoisture and the like may be formed through such a silicon oxide film.

It is possible to manufacture this solid-state image pickup device 1A inthe following manner, for example.

First, the insulating film 22A and the insulating film 22B each of whichis made of the above-described material are formed on the semiconductorsubstrate 21. At the same time, if desired, a metallic plug or ametallic wire that is not shown in the drawing may be formed.

Subsequently, the lower transparent electrode 11B that is made of theabove-described material is formed on the insulating film 22B.Thereafter, the insulating film 22C that is made of the above-describedmaterial is formed at a clearance and a surrounding area of the lowertransparent electrode 11B.

Thereafter, the organic film 11A and the upper transparent electrode 11Care formed on the lower transparent electrode 11B. In such a manner, thefunctional region 11 having the lower transparent electrode 11B and theupper transparent electrode 11C with the organic film 11A interposedbetween is formed.

Following on the formation of the functional region 11, the groove 23 isprovided on the insulating film 22 prior to cladding of the passivationfilm 30, and the embedded layer 40E that is made of the above-describedmaterial is embedded into the inside of this groove 23. In such amanner, the guard ring 40 that is configured of the embedded layer 40Ethat is embedded into the inside of this groove 23 to be provided on theinsulating film 22 is formed around the functional region 11.

Afterward, the passivation film 30 that is made of the above-describedmaterial is formed over a whole area of the top surface of thefunctional region 11 and the top surface of the insulating film 22. Atthis time, the passivation film 30 may be desirably cladded directlyjust above the embedded layer 40E configuring the guard ring 40.

Further, the bonding pads 13 that are not shown in the drawing areformed around the functional region 11. The aperture 14 is provided at aposition each facing the bonding pads 13 on the insulating film 22 orthe semiconductor substrate 21, and each of the bonding pads 13 isexposed on the bottom of the aperture 14. Such steps that are describedthus far complete the solid-state image pickup device 1A illustrated inFIG. 1 and FIG. 3.

The operation and function of the solid-state image pickup device 1A arethe same as those of the solid-state image pickup device 1 according tothe first embodiment.

As described above, in this embodiment of the present disclosure, theguard ring 40 is configured of the embedded layer 40E that is embeddedinto the inside of the groove 23 that is provided on the insulating film22, and thus it is possible to set up a material and thickness of theembedded layer 40E without any restriction in addition of the effects ofthe first embodiment. Especially, this may be preferable for a casewhere a wiring layer is formed of only a transparent electrode layermade of a material such as ITO that does not have a function ofsuppressing permeation of moisture and gas.

3. Third Embodiment

FIG. 4 shows a cross-sectional configuration of a solid-state imagepickup device according to a third embodiment of the present disclosure.This solid-state image pickup device 1B is different from thesolid-state image pickup device 1 according to the first embodiment inthe cross-sectional configuration of the guard ring 40. Morespecifically, the guard ring 40 is configured of the passivation film 30that is cladded into the inside of the groove 23 that is provided on theinsulating film 22. Such a configuration in which the passivation film30 is also served as the guard ring 40 eliminates the necessity for theuse of the metallic films for forming the guard ring 40, and thus it ispossible to form the guard ring 40 further more easily.

As with the first embodiment, the passivation film 30 is configured of amaterial that is not permeable to moisture and oxygen therethrough. Morespecifically, the passivation film 30 may be desirably configured of asilicon nitride film, a silicon oxynitride film, or an aluminum oxidefilm. Alternatively, the passivation film 30 may be desirably configuredof a laminated film stacking the silicon nitride film, the siliconoxynitride film, or the aluminum oxide film.

The groove 23 may desirably reach the semiconductor substrate 21. Thereason is that this makes it possible to assuredly block off intrusionof moisture and the like.

As shown in FIG. 4, the passivation film 30 may be formed along an innersurface of the groove 23. However, the passivation film 30 may desirablyembed the groove 23 completely. The reason is that this makes itpossible to reduce unevenness or level difference on the top surface ofthe chip 10, and it is possible to facilitate subsequent manufacturingprocesses (formation of a planarizing film, as well as formation of acolor filter and an on-chip lens).

It is possible to manufacture this solid-state image pickup device 1B inthe following manner, for example.

First, the insulating film 22A and the insulating film 22B each of whichis made of the above-described material are formed on the semiconductorsubstrate 21. At the same time, if desired, a metallic plug or ametallic wire that is not shown in the drawing may be formed.

Subsequently, the lower transparent electrode 11B that is made of theabove-described material is formed on the insulating film 22B.Thereafter, the insulating film 22C that is made of the above-describedmaterial is formed at a clearance and a surrounding area of the lowertransparent electrode 11B.

Thereafter, the organic film 11A and the upper transparent electrode 11Care formed on the lower transparent electrode 11B. In such a manner, thefunctional region 11 having the lower transparent electrode 11B and theupper transparent electrode 11C with the organic film 11A interposedbetween is formed.

Following on the formation of the functional region 11, the groove 23 isprovided on the insulating film 22 prior to cladding of the passivationfilm 30. Afterward, the passivation film 30 that is made of theabove-described material is formed over a whole area of the top surfaceof the functional region 11 and the top surface of the insulating film22, and the passivation film 30 is embedded into the inside of thegroove 23. In such a manner, the guard ring 40 that is configured of thepassivation film 30 that is embedded into the inside of the groove 23 tobe provided on the insulating film 22 is formed around the functionalregion 11.

Further, the bonding pads 13 that are not shown in the drawing areformed around the functional region 11. The aperture 14 is provided at aposition each facing the bonding pads 13 on the insulating film 22 orthe semiconductor substrate 21, and each of the bonding pads 13 isexposed on the bottom of the aperture 14. Such steps that are describedthus far complete the solid-state image pickup device 1B illustrated inFIG. 1 and FIG. 4.

The operation and function of the solid-state image pickup device 1B arethe same as those of the solid-state image pickup device 1 according tothe first embodiment.

As described above, in this embodiment of the present disclosure, theguard ring 40 is configured of the passivation film 30 that is embeddedinto the inside of the groove 23 that is provided on the insulating film22, and thus it is possible to form the guard ring 40 further moreeasily in addition to the effects of the first embodiment.

4. Fourth Embodiment

FIG. 5 shows a planar configuration of a solid-state image pickup deviceaccording to a fourth embodiment of the present disclosure. Thissolid-state image pickup device 1C is different from the solid-stateimage pickup device 1 according to the first embodiment in a planarshape of the guard ring 40. More specifically, the guard ring 40includes second guard rings 42 each of which surrounds the aperture 14and a third guard ring 43 along the outer circumference of the chip 10.In concrete terms, the second guard ring 42 is provided along a visibleoutline of the aperture 14, and one second guard ring 42 surrounds oneaperture 14. The third guard ring 43 surrounds a whole area of thefunctional region 11 and the apertures 14 along a visible outline of thechip 10. As a result, in this embodiment of the present disclosure, theguard ring 40 is arranged at a location away from the functional region11, and thus it is possible to arrange a peripheral circuit sectionaround the functional region 11 without any restriction of a layout, aswell as to achieve the optimum layout of peripheral circuits thatsuppresses delay in signal transmission and the like.

For a cross-sectional configuration of the guard ring 40, it is possibleto adopt any of the above-described first, second, or third embodimentsof the present disclosure.

It is possible to manufacture this solid-state image pickup device 1C inthe same manner as with the above-described first, second, or thirdembodiments in accordance with a cross-sectional configuration of theguard ring 40. In this embodiment of the present disclosure, the guardring 40 is arranged at a location away from the functional region 11,and thus when a material film to be served as a color filter or anon-chip lens is formed on the functional region 11 in a spin coatingmethod in the manufacturing method, it is less likely that filmunevenness and the like will be caused due to a level difference of theguard ring 40. Therefore, this makes it possible to suppress unevennessin a shape of a color filter or an on-chip lens in ends of thefunctional region 11.

In this solid-state image pickup device 1C, an electric charge isgenerated upon incidence of light into the organic film 11A. As with thefirst embodiment, such a charge is collected on the lower transparentelectrode 11B to be further transferred to a charge output section thatis not shown in the drawing, and then is output to the outside of thechip 10 via multi-layer wiring that is not shown in the drawing and thebonding pads 13.

Here, the guard ring 40 includes the second guard rings 42 each of whichsurrounds the aperture 14 and the third guard ring 43 along the outercircumference of the chip 10. Therefore, as with the first embodiment,any moisture and gas that may intrude from a transverse direction, suchas the end surfaces 10A of the chip 10, and the side surfaces of theaperture 14 on the bonding pad 13 are blocked by the second guard rings42 and the third guard ring 43 to suppress deterioration in thecharacteristics of the organic layer 11A.

As described above, in this embodiment of the present disclosure, theguard ring 40 includes the second guard rings 42 each of which surroundsthe aperture 14 and the third guard ring 43 along the outercircumference of the chip 10, and thus it is possible to achieve theoptimum layout of peripheral circuits that suppresses delay in signaltransmission and the like in addition to the effects of the firstembodiment.

5. Fifth Embodiment

FIG. 6 shows a planar configuration of a solid-state image pickup deviceaccording to a fifth embodiment of the present disclosure. Thissolid-state image pickup device 1D combines the first and fourthembodiments concerning a planar shape of the guard ring 40. Morespecifically, the guard ring 40 includes the first guard ring 41 that isprovided at a region that surrounds the functional region 11 and thatdoes not include the aperture 14, the second guard rings 42 each ofwhich surrounds the aperture 14, and the third guard ring 43 along theouter circumference of the chip 10. As a result, in this embodiment ofthe present disclosure, an intrusion path of moisture and gas that mayreach the functional region 11 from the end surfaces 10A of the chip 10,the side surfaces of the aperture 14 on the bonding pad 13, and the likeis blocked in two stages by the second guard rings 42 and the thirdguard ring 43, as well as the first guard ring 41, and thus it ispossible to further improve the reliability of the solid-state imagepickup device 1D.

For a cross-sectional configuration of the guard ring 40, it is possibleto adopt any of the above-described first, second, or third embodimentsof the present disclosure.

It is possible to manufacture this solid-state image pickup device 1D inthe same manner as with the above-described first, second, or thirdembodiments in accordance with a cross-sectional configuration of theguard ring 40.

In this solid-state image pickup device 1D, an electric charge isgenerated upon incidence of light into the organic film 11A. As with thefirst embodiment, such a charge is collected on the lower transparentelectrode 11B to be further transferred to a charge output section thatis not shown in the drawing, and then is output to the outside of thechip 10 via multi-layer wiring that is not shown in the drawing and thebonding pads 13.

Here, the guard ring 40 includes the first guard ring 41 that isprovided at a region that surrounds the functional region 11 and thatdoes not include the aperture 14, the second guard rings 42 each ofwhich surrounds the aperture 14, and the third guard ring 43 along theouter circumference of the chip 10. Therefore, any moisture and gas thatmay intrude in a transverse direction from the end surfaces 10A of thechip 10 are blocked in two stages by the third guard ring 43 and thefirst guard ring 41. Further, any moisture and gas that may intrude in atransverse direction from the side surfaces of the aperture 14 on thebonding pad 13 are blocked in two stages by the second guard ring 42 andthe first guard ring 41. Consequently, this ensures to suppressdeterioration in the characteristics of the organic layer 11A.

As described above, in this embodiment of the present disclosure, theguard ring 40 includes the first guard ring 41 that is provided at aregion that surrounds the functional region 11 and that does not includethe aperture 14, the second guard rings 42 each of which surrounds theaperture 14, and the third guard ring 43 along the outer circumferenceof the chip 10, and thus it is possible to further more assuredlysuppress intrusion of moisture and gas from a transverse direction, suchas the end surfaces 10A of the chip 10, and the side surfaces of theaperture 14 on the bonding pad 13 in addition to the effects of thefirst embodiment.

6. Sixth Embodiment

FIG. 7 shows a planar configuration of a solid-state image pickup deviceaccording to a sixth embodiment of the present disclosure. Thissolid-state image pickup device 1E is different from the solid-stateimage pickup device 1 according to the first embodiment in a planarshape of the guard ring 40. More specifically, as with the fourthembodiment, the guard ring 40 includes the second guard rings 42 each ofwhich surrounds the aperture 14 and the third guard ring 43 along theouter circumference of the chip 10. The second guard ring 42 is providedacross the plurality of apertures 14. In this embodiment of the presentdisclosure, this reduces a concern about a possibility that the guardring 40 will interfere with reduction in a distance between the bondingpads 13 (pad pitch). Therefore, it is possible to make the pad pitchsmaller for reducing a size of the overall chip 10, and this isfavorable for reduction in size and costs.

For a cross-sectional configuration of the guard ring 40, it is possibleto adopt any of the above-described first, second, or third embodimentsof the present disclosure.

It is possible to manufacture this solid-state image pickup device 1E inthe same manner as with the above-described first, second, or thirdembodiments in accordance with a cross-sectional configuration of theguard ring 40.

The operation, function, and effects of this solid-state image pickupdevice 1E are the same as those of the solid-state image pickup device1C according to the fourth embodiment.

It is to be noted that, in this embodiment of the present disclosure, asa matter of course, the guard ring 40 may also include the first guardring 41 that is provided at a region that surrounds the functionalregion 11 and that does not include the aperture 14.

7. Seventh Embodiment

FIG. 8 shows a cross-sectional configuration of a solid-state imagepickup device according to a seventh embodiment of the presentdisclosure. This embodiment relates to an example of a connectingconfiguration between the lower transparent electrode 11B and thebonding pads 13 in a case where the guard ring 40 is provided, and isapplicable to all of the above-described first to sixth embodiments. Itis to be noted that FIG. 8 shows a case where the guard ring 40 has theplanar shape similar to that in the first embodiment (see FIG. 1) andthe cross-sectional shape similar to that in the second embodiment (seeFIG. 3). However, the planar shape of the guard ring 40 may be alsosimilar to that in any of the fourth to sixth embodiments, and thecross-sectional shape of the guard ring 40 may be also similar to thatin the first or third embodiment.

More specifically, this solid-state image pickup device 1F has a chargetransmission section (charge transfer section) 51 inside thesemiconductor substrate 21, and a multi-layer wiring 52 on the oppositeside of the semiconductor substrate 21. The charge transmission section50 is provided in a manner of passing through from the principal surfaceto the opposite surface of the semiconductor substrate 21, and transmitsa signal charge that is photoelectric-converted by the organic film 11Aor a potential corresponding to a signal charge to the bonding pads 13via the multi-layer wiring 52.

In concrete terms, an end on the principal surface side of the chargetransmission section 51 is connected with the lower transparentelectrode 11B via the metallic plug 24. An end on the opposite side ofthe charge transmission section 51 is connected with the bonding pad 13via the multi-layer wiring 52. The multi-layer wiring 52 may include,for example, a first metallic plug 52A, a metallic wire 52B, and asecond metallic plug 52C in this order from the charge transmissionsection 51 side. The multi-layer wiring 52 and the bonding pad 13 areinsulated by insulating films 53A to 53E each of which may be configuredof, for example, a silicon oxide film. It is to be noted that FIG. 8illustrates the charge transmission section 51 in an abstracted form,and a configuration of the charge transmission section 51 is notspecifically limited. Further, the number of stacked layers andconfiguration of the metallic plug 24 and the multi-layer wiring 52 arealso not specifically limited.

In this solid-state image pickup device 1F, a signal charge that isphotoelectric-converted by the organic film 11A is collected on thelower transparent electrode 11B, and thereafter is further transferredto the bonding pads 13 via the first metallic plug 52A, the metallicwire 52B, and the second metallic plug 52C that are provided on theopposite side of a light incidence surface of the semiconductorsubstrate 21 by the charge transmission section 51 that is providedinside the semiconductor substrate 21 to be output to the outside.

It is to be noted that, in this embodiment of the present disclosure, aconfiguration is shown where a signal that is photoelectric-converted bythe organic film 11A is transmitted directly to the bonding pads 13.However, it is possible to adopt various signal output methods that areintroduced typically in an image sensor, such as a method of convertinga charge into a voltage in the course until a point of time when asignal is taken out of the bonding pads 13.

Further, FIG. 8 shows a case where the bonding pads 13 are provided onthe opposite side of the principal surface (light incidence surface) ofthe semiconductor substrate 21. However, the bonding pads 13 may beformed on the principal surface side of the semiconductor substrate 21.In this case, it is also possible to adopt a configuration in which asignal charge or a signal voltage is once transmitted to the metallicwire arranged on the opposite side of the semiconductor substrate 21,and subsequently such a signal charge or a signal voltage is connectedwith the bonding pads 13 that are formed on the principal surface of thesemiconductor substrate 21 by the use of the charge transmission sectionor the charge transfer section that is provided below the bonding pads13 in a manner of passing through the semiconductor substrate 21.

The present disclosure is described thus far with reference to someembodiments. However, the present disclosure is not limited to theabove-described embodiments, and various modifications may be made.

For example, in the above-described first embodiment, the description isprovided on a case where the single first metallic plug 40A is providedbetween the semiconductor substrate 21 and the first metallic wire 40B.However, as shown in FIG. 9, the two first metallic plugs 40A may beprovided alternatively. The same is true for other metallic plugs.

Further, in the above-described embodiments, the description is providedon a case where each of the first guard ring 41, the second guard ring42, and the third guard ring 43 is provided singly. However, forexample, as shown in FIG. 10, it is also possible to provide the twofoldfirst guard ring 41. The same is true for the second guard ring 42 andthe third guard ring 43.

Moreover, for example, in the above-described embodiments, thedescription is provided on a case where the lower transparent electrode11B is split for each pixel, and the upper transparent electrode 11C isa common electrode. However, it is also possible to adopt aconfiguration in which the upper transparent electrode 11C is split foreach pixel, and the lower transparent electrode 11B is a commonelectrode. In this case, a photoelectric-converted signal charge iscollected on the upper transparent electrode 11C to be output to theoutside of the chip 10 via a charge output section (not shown in thedrawing) that is connected with the upper transparent electrode 11C.

In addition, for example, in the above-described embodiments, theconfigurations of the solid-state image pickup devices 1A to 1F areexplained with concrete descriptions. However, it is not necessary toprovide all the component parts, and any other component parts may befurther provided.

It is possible to achieve at least the following configurations from theabove-described example embodiments of the disclosure.

-   (1)

A solid-state image pickup device, including:

a functional region provided with an organic film; and

a guard ring surrounding the functional region.

-   (2)

The solid-state image pickup device according to (1), further including:

a bonding pad that is provided at a peripheral region around thefunctional region; and

an aperture that is provided at a position facing the bonding pad.

-   (3)

The solid-state image pickup device according to (2), wherein the guardring includes a first guard ring that is provided at a region thatsurrounds the functional region and that does not include the aperture.

-   (4)

The solid-state image pickup device according to (2) or (3), wherein theguard ring includes:

a second guard ring surrounding the aperture; and

a third guard ring along an outer circumference of a chip.

-   (5)

The solid-state image pickup device according to (4), wherein the secondguard ring is provided across a plurality of apertures.

-   (6)

The solid-state image pickup device according to any one of (1) to (5),wherein the guard ring is configured of a material film that is notpermeable to moisture and oxygen therethrough.

-   (7)

The solid-state image pickup device according to any one of (1) to (6),wherein the guard ring has a configuration in which one or more metalliclayers are laminated around the functional region.

-   (8)

The solid-state image pickup device according to (7), wherein themetallic layer is configured of aluminum, tungsten, titanium,molybdenum, tantalum, copper, an alloy film of aluminum, tungsten,titanium, molybdenum, tantalum, copper, or a silicon- oroxygen-containing metallic film of aluminum, tungsten, titanium,molybdenum, tantalum, and copper.

-   (9)

The solid-state image pickup device according to (7) or (8), furtherincluding a passivation film;

the passivation film is cladded directly on an uppermost layerconfiguring the guard ring.

-   (10)

The solid-state image pickup device according to any one of (1) to (6),further including an insulating film around the functional region;wherein

the guard ring is configured of an embedded layer that is embedded intoan inside of a groove that is provided on the insulating film.

-   (11)

The solid-state image pickup device according to (10), wherein theembedded layer is configured of a metallic film or a silicon nitridefilm.

-   (12)

The solid-state image pickup device according to (11), wherein themetallic layer is configured of aluminum, tungsten, titanium,molybdenum, tantalum, copper, an alloy film of aluminum, tungsten,titanium, molybdenum, tantalum, copper, or a silicon- oroxygen-containing metallic film of aluminum, tungsten, titanium,molybdenum, tantalum, and copper.

-   (13)

The solid-state image pickup device according to any one of (10) to(12), further including a passivation film that covers a top surface ofthe functional region and a top surface of the insulating film,

wherein the passivation film is cladded directly on the embedded layer.

-   (14)

The solid-state image pickup device according to any one of (1) to (6),further including:

an insulating film that is provided around the functional region; and

a passivation film that covers a top surface of the functional regionand a top surface of the insulating film, wherein

the guard ring is configured of the passivation film cladded at aninside of a groove that is provided on the insulating film.

-   (15)

The solid-state image pickup device according to any one of (9), (13)and (14) wherein the passivation film is configured of a material filmthat is not permeable to moisture and oxygen therethrough.

-   (16)

The solid-state image pickup device according to (15), wherein thepassivation film is configured of a silicon nitride film, a siliconoxynitride film, or an aluminum oxide film, or a laminated film stackinga silicon nitride film, a silicon oxynitride film, or an aluminum oxidefilm.

-   (17)

The solid-state image pickup device according to any one of (1) to (16),further including:

a semiconductor substrate on which the functional region is provided ona principal surface side thereof;

a charge transmission section that is provided inside the semiconductorsubstrate; and

a multi-layer wire that is provided on an opposite side of the principalsurface of the semiconductor substrate and is connected with the bondingpad, wherein

the charge transmission section transmits a signal charge that isphotoelectric-converted by the organic film or a potential correspondingto a signal charge to the bonding pad via the multi-layer wire.

-   (18)

A method of manufacturing a solid-state image pickup device, the methodincluding:

forming a functional region provided with an organic film on a principalsurface side of a semiconductor substrate; and

forming a guard ring surrounding the functional region by laminating oneor more metallic layers around the functional region.

-   (19)

A method of manufacturing a solid-state image pickup device, the methodincluding:

forming a functional region provided with an organic film on a principalsurface side of a semiconductor substrate, and forming an insulatingfilm around the functional region; and

forming a guard ring surrounding the functional region by providing agroove on the insulating film to form an embedded layer that isconfigured of a metallic film or a silicon nitride film inside thegroove.

-   (20)

A method of manufacturing a solid-state image pickup device, the methodincluding:

forming a functional region provided with an organic film on a principalsurface side of a semiconductor substrate, and forming an insulatingfilm around the functional region; and

forming a guard ring surrounding the functional region by providing agroove on the insulating film to clad a passivation film inside thegroove.

It should be understood by those skilled in the art that variousmodifications, combinations, sub-combinations and alterations may occurdepending on design requirements and other factors insofar as they arewithin the scope of the appended claims or the equivalents thereof.

The invention claimed is:
 1. A solid-state image pickup device, comprising: a functional region provided with an organic photoelectric conversion film over a light incident surface of a semiconductor substrate; a plurality of bonding pads disposed in a peripheral region around the functional region; a plurality of guard rings surrounding the plurality of bonding pads, wherein the guard rings are connected to the semiconductor substrate; and a plurality of apertures facing the bonding pads, wherein the plurality of guard rings includes a first guard ring that is disposed outside of the plurality of bonding pads and surrounds the plurality of bonding pads in a plan view and second guard rings that surround the plurality of bonding pads respectively in the plan view.
 2. The solid-state image pickup device according to claim 1, further comprising: a plurality of pixels arranged in a matrix pattern within the functional region.
 3. The solid-sate image pickup device according to claim 1, wherein, in cross-section, the plurality of guard rings are disposed at least from the light incident surface of the semiconductor to a same layer as the organic film.
 4. The solid-state image pickup device according to claim 3, wherein first ends of the plurality of guard rings are connected to the semiconductor substrate.
 5. The solid-state image pickup device according to claim 1, wherein the plurality of guard rings include a plurality of layers.
 6. The solid-state image pickup device according to claim 1, wherein the plurality of guard rings are formed from a plurality of metallic layers.
 7. The solid-state image pickup device according to claim 6, wherein at least a first layer of the plurality of guard rings is a first metallic plug.
 8. The solid-state image pickup device according to claim 7, wherein at least a second layer of the plurality of guard rings is a first metallic wire.
 9. The solid-state image pickup device according to claim 8, wherein at least a third layer of the plurality of guard rings is a second metallic plug.
 10. The solid-state image pickup device according to claim 9, wherein at least a fourth layer of the plurality of guard rings is a second metallic wire.
 11. The solid-state image pickup device according to claim 1, further comprising: a plurality of insulating films, wherein at least a portion of at least some of the insulating films are between the light incident surface of the semiconductor substrate and the organic film.
 12. The solid-state image pickup device according to claim 11, wherein at least a side surface of each of the insulating films between the light incident surface of the semiconductor substrate and the organic film are in contact with the plurality of the guard rings.
 13. The solid-state image pickup device according to claim 11, wherein the insulating films are each a silicon oxide film.
 14. The solid-state image pickup device according to claim 12, further comprising: an upper electrode, wherein the upper electrode is on a light incident side of the organic film; a lower electrode, wherein the lower electrode is between the organic film and the light incident surface of the semiconductor substrate.
 15. The solid-state image pickup device according to claim 14, wherein the upper electrode is a common electrode.
 16. The solid-state image pickup device according to claim 15, wherein the lower electrode is a pixel electrode.
 17. The solid-state image pickup device according to claim 16, wherein the organic film is an organic photoelectric conversion film.
 18. The solid-state image pickup device according to claim 14, further comprising: a passivation film, wherein the passivation film covers a top surface of the functional region and a top surface of the plurality of guard rings.
 19. The solid-state image pickup device according to claim 18, wherein the passivation film is at least one of a silicon nitride film, a silicon oxynitride film, or an aluminum oxide film.
 20. The solid-state image pickup device according to claim 18, wherein the passivation film is in contact with the top surface of the plurality of guard rings.
 21. The solid-state image pickup device according to claim 18, wherein the passivation film is in contact with the top surface of the plurality of guard rings and at least a portion of a side surface of the plurality of guard rings.
 22. The solid-state image pickup device according to claim 18, wherein the passivation film is in contact with the top surface of the plurality of guard rings, at least a portion of a first side surface of the plurality of guard rings, and at least a portion of a second side surface of the plurality of guard rings.
 23. The solid-state image pickup device according to claim 18, wherein the plurality of guard rings include a plurality of layers, and wherein the passivation film is in contact with the top surface of a top layer of the plurality of guard rings.
 24. The solid-state image pickup device according to claim 23, wherein the layers of the plurality of guard rings are metallic layers.
 25. The solid-state image pickup device according to claim 23, wherein the passivation film is in contact with at least one side surface of the top layer of the plurality of guard rings.
 26. The solid-state image pickup device according to claim 24, wherein the passivation film is not in contact with a layer of the plurality of guard rings other than the top layer.
 27. The solid-state image pickup device according to claim 1, wherein the plurality of guard rings include a plurality of layers, and wherein a top layer of the plurality of guard rings is at the same layer as the organic film.
 28. The solid-state image pickup device according to claim 1, wherein the functional region includes a plurality of pixels.
 29. An electronic apparatus, comprising: a solid-state image pickup device, including: a functional region provided with an organic photoelectric conversion film over a light incident surface of a semiconductor substrate; a plurality of bonding pads disposed in a peripheral region around the functional region; a plurality of guard rings surrounding the plurality of bonding pads, wherein the guard rings are connected to the semiconductor substrate; and a plurality of apertures facing the bonding pad, wherein the plurality of guard rings includes a first guard ring that is disposed outside of the plurality of bonding pads and surrounds the plurality of bonding pads in a plan view and second guard rings that surround the plurality of bonding pads respectively in the plan view. 